FDMA908PZ Datasheet Text
FDMA908PZ Single P-Channel PowerTrench® MOSFET
FDMA908PZ
Single P-Channel PowerTrench® MOSFET
February 2014
-12 V, -12 A, 12.5 mΩ
Features
- Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -12 A
- Max rDS(on) = 18 mΩ at VGS = -2.5 V, ID = -10 A
- Max rDS(on) = 28 mΩ at VGS = -1.8 V, ID = -8 A
- Low Profile
- 0.8 mm maximum in the new package MicroFET
2x2 mm
- HBM ESD protection level > 2.8 kV typical (Note 3)
- Free from halogenated pounds and antimony oxides
- RoHS pliant
General Description
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It Features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Pin 1 Drain
DD G Source
Bottom Drain Contact
D
D
D D
DD S MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA =...
