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FDMA1430JP - -30V -2.9A Integrated P-Channel MOSFET and BJT

General Description

This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications.

Key Features

  • Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A.
  • Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A.
  • Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A.
  • Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A.
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2.
  • HBM ESD protection level > 2 kV typical (Note 3).
  • RoHS Compliant General.

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FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT -30 V, -2.9 A, 90 mΩ July 2014 Features „ Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A „ Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A „ Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A „ Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 „ HBM ESD protection level > 2 kV typical (Note 3) „ RoHS Compliant General Description This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications.