FDD8N50NZ Key Features
- RDS(on) = 770 mΩ (Typ.) @ VGS = 10 V, ID = 3.25 A
- Low Gate Charge (Typ. 14 nC)
- Low Crss (Typ. 5 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Imoroved Capability
- RoHS pliant
- Part: FDD8N50NZ
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 584.29 KB
Other FDD8N50NZ Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
FDD8N50NZ | N-Channel MOSFET |