FDD86110 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 10.2 mΩ at VGS = 10 V, ID = 12.5 A
- Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9.8 A
- 100% UIL tested
- RoHS pliant
- DC Conversion
- 55 to +150
- Part: FDD86110
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 396.74 KB
Related Fairchild Semiconductor Datasheets
| Part Number | Description |
|---|---|
| FDD86113LZ | N-Channel MOSFET |
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