FDC8884 - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC8884
Manufacturer	Fairchild Semiconductor
File Size	319.39 KB
Description	N-Channel MOSFET
Datasheet	FDC8884 Datasheet
Additional preview pages of the FDC8884 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on) switching performance. Primary Switch S D D Pin 1 G D D SuperSOTTM -6 S4 D5 D6 3G 2D 1D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) TC = 25 °C -Continuous TA = 25 °C -Pulsed Power Dissi

Features

Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A.
Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 6.0 A.
High performance trench technology for extremely low rDS(on).
Fast switching speed.
RoHS Compliant General.

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Published: Aug 3, 2014 |