FDC636P - P-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC636P
Manufacturer	Fairchild Semiconductor
File Size	198.20 KB
Description	P-Channel MOSFET
Datasheet	FDC636P Datasheet
Additional preview pages of the FDC636P datasheet.

Product details

Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

-2.8 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V. SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 .63 6 2 5 G SuperSOT TM pin 1 D D 3 4 -6 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter VDSS V.

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Published: Mar 30, 2005 |