Datasheet Details
| Part number | FDC604P |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 112.10 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDC604P Datasheet
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General Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process.
It has been optimized for battery power management applications.
Battery management Load switch Battery protectionKey Features
- 5.5 A,.
- 20 V. RDS(ON) = 33 mΩ @ VGS =.
- 4.5 V RDS(ON) = 43 mΩ @ VGS =.
- 2.5 V RDS(ON) = 60 mΩ @ VGS =.
- 1.8 V.
- Fast switching speed.
- High performance trench technology for extremely low RDS(ON) S D D SuperSOT TM-6 G D D 1 6 2 5 3 4 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
- Continuous.
- Pulsed (Note.