Datasheet4U Logo Datasheet4U.com

FDB3860 - N-Channel MOSFET

General Description

This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process.

This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.

DC-AC Conversion Synchro

Key Features

  • Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A.
  • High performance trench technology for extremely low rDS(on).
  • 100% UIL tested.
  • RoHS Compliant General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDB33N25 N-Channel MOSFET ON Semiconductor
FDB3632 N-Channel MOSFET INCHANGE
FDB3632 N-Channel MOSFET Kexin
FDB3632 100V 80A N-Channel MOSFET ON Semiconductor
FDB3632-F085 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDB38N30U N-Channel MOSFET
FDB33N25 N-Channel MOSFET
FDB3502 MOSFET
FDB3632 N-Channel MOSFET
FDB3652 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDB3860 N-Channel PowerTrench® MOSFET March 2009 FDB3860 N-Channel PowerTrench® MOSFET 100 V, 30 A, 37 mΩ Features „ Max rDS(on) = 37 mΩ at VGS = 10 V, ID = 5.9 A „ High performance trench technology for extremely low rDS(on) „ 100% UIL tested „ RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of Fairchild Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications „ DC-AC Conversion „ Synchronous Rectifier D D G S TO-263AB FDB Series G S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted www.DataSheet4U.