FDB024N08BL7
Features
- RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
- Low FOM RDS(on)
- QG
- Low Reverse Recovery Charge, Qrr = 112 n C
- Soft Reverse Recovery Body Diode
- Enables Highly Efficiency in Synchronous Rectification
- Fast Switching Speed
- Ro HS pliant
- Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.1
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance Power Trench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
123 567
D2-PAK (TO-263)
1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source
D(Pin4, tab)
G (Pin1)
S(Pin2,3,5,6,7)
MOSFET Maximum Ratings TC = 25o C unless otherwise noted
Symbol
Parameter
VDSS VGSS
IDM EAS dv/dt
Drain to Source Voltage
Gate to...
