FCPF13N60NT
Features
- RDS(on) = 0.244Ω ( Typ.) @ VGS = 10V, ID = 6.5A
- Ultra Low Gate Charge ( Typ.Qg = 30.4n C)
- Low Effective Output Capacitance
- 100% Avalanche Tested
- Ro HS pliant
TM Supre MOS
August 2009
Description
The Supre MOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, Supre MOS provides world class Rsp, superior switching performance and ruggedness. This Supre MOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/tele power, FPD TV power, ATX power, and industrial power applications.
TO-220 FCP Series
GD S
TO-220F FCPF Series
MOSFET Maximum Ratings TC = 25o C unless otherwise noted
Symbol VDSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage -Continuous (TC = 25o C)
- Pulsed FCP13N60N FCPF13N60NT 600 ±30 13 8.2 (Note 1) (Note...
