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CNY173M - Phototransistor Optocouplers

Download the CNY173M datasheet PDF. This datasheet also covers the CNY171M variant, as both devices belong to the same phototransistor optocouplers family and are provided as variant models within a single manufacturer datasheet.

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.

Figure 1.

Features

  • High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
  • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation.
  • Current Transfer Ratio In Select Groups.
  • Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M).
  • Safety and Regulatory Approvals:.
  • UL1577, 4,170 VACRMS for 1 Minute.
  • DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CNY171M-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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CNY17XM, CNY17FXM, MOC8106M — 6-Pin DIP High BVCEO Phototransistor Optocouplers October 2014 CNY171M, CNY172M, CNY173M, CNY174M, CNY17F1M, CNY17F2M, CNY17F3M, CNY17F4M, MOC8106M 6-Pin DIP High BVCEO Phototransistor Optocouplers Features ■ High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M) ■ Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Variation ■ Current Transfer Ratio In Select Groups ■ Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M) ■ Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute – DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications ■ Power Supply Regulators ■ Digital Logic Inputs ■ Microprocessor Inputs ■ Appliance Sensor Systems ■ Indus
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