BCV26 - PNP Darlington Transistor

Fairchild Semiconductor

Datasheet Details

Part number	BCV26
Manufacturer	Fairchild Semiconductor
File Size	36.40 KB
Description	PNP Darlington Transistor
Datasheet	BCV26 Datasheet
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BCV26 Discrete POWER & Signal Technologies BCV26 C E SOT-23 Mark: FD B PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 30 40 10 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits.

Published: Mar 23, 2005 |