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2P102A - FDFS2P102A

General Description

The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

This device is designed specifically as a single package solution for DC to DC converters.

Key Features

  • a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features.
  • 3.3 A,.
  • 20V RDS(ON) = 125 mΩ @ VGS =.
  • 10 V RDS(ON) = 200 mΩ @ VGS =.
  • 4.5 V.
  • VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A.
  • Schottky and MOSFET incorporated into single power surface mount SO-8 package.
  • Electrically indepen.

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www.DataSheet.co.kr FDFS2P102A August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features • –3.3 A, –20V RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V • VF < 0.39 V @ 1 A (TJ = 125°C) VF < 0.47 V @ 1 A VF < 0.