2N7002L
Features
- High Density Cell Design for Low RDS(ON)
- Voltage Controlled Small Signal Switch
- Rugged and Reliable
- High Saturation Current Capability
- Very Low Capacitance
- Fast Switching Speed
Description
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level translator, high speed line drivers, power management/power supply, and switching applications.
S G SOT-23
Ordering Information
Part Number 2N7002L
Marking 70L
D GS
Package SOT-23 3L
Packing Method Tape and Reel
© 2014 Fairchild Semiconductor Corporation 2N7002L Rev. 1.0.1
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- N-Channel Enhancement Mode Field Effect Transistor
Absolute Maximum Ratings
Stresses exceeding...
