2010DN - FYP2010DN

Datasheet Summary

Features

Low forward voltage drop.
High frequency properties and switching speed.
Guard ring for over-voltage protection.

Fairchild Semiconductor

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Datasheet Details

Part number	2010DN
Manufacturer	Fairchild Semiconductor
File Size	75.98 KB
Description	FYP2010DN
Datasheet	2010DN Datasheet
Additional preview pages of the 2010DN datasheet.

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www.DataSheet4U.com FYP2010DN FYP2010DN Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications • Switched mode power supply • Freewheeling diodes 1 2 3 TO-220 1. Anode 2.Cathode 3. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VRRM VR IF(AV) IFSM TJ, TSTG Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @ TC = 120°C Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 100 100 20 150 -65 to +150 Units V V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Value 1.

Published: Jun 14, 2009 |