Download 1N4154 Datasheet PDF
Fairchild Semiconductor
1N4154
Description : The high breakdown voltage, fast switching speed and high forward conductance of this diode packaged in a DO-35 miniature Glass Axial leaded package makes it desirable also as a general purpose diode. Features : DISCRETE POWER AND SIGNAL TECHNOLOGIES - 500 milliwatt Power Dissipation package. - Fast Switching Speed, - Typical capacitance less than 1.0 picofarad. Ordering: - 13 inch reel, 50 mm (T50R) & 26 mm (T26R) Tape; 10,000 units per reel. High Conductance Fast Diode Absolute Maximum Ratings- Sym Tstg TJ PD R OJA Wiv IO IF if i F(surge) TA = 25OC unless otherwise noted Parameter Storage Temperature Operating Junction Temperature Total Power Dissipation at TA = 25OC Linear Derating Factor from TA = 25OC Thermal Resistance Junction-to-Ambient Working Inverse Voltage Average Rectified Current DC Forward Current (IF) Recurrent Peak Forward Current (IF) Peak Forward Surge Current (IFSM) Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Value -65 to +200 175 500...