13N06L - FQB13N06L

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Fairchild Semiconductor

Part number	13N06L
Manufacturer	Fairchild Semiconductor
File Size	696.68 KB
Description	FQB13N06L
Datasheet	13N06L Datasheet
Additional preview pages of the 13N06L datasheet.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

13.6A, 60V, RDS(on) = 0.11Ω @VGS = 10 V Low gate charge ( typical 4.8 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G S G! ! " " " D2-PAK FQB Series G D S I2-PAK FQI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuou.

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Published: Mar 28, 2011 |