Full PDF Text Transcription for FS8205A (Reference)
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FS8205A. For precise diagrams, and layout, please refer to the original PDF.
Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process technology High density cell d...
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MOSFET Feature Advanced trench process technology High density cell design for ultra low on-resistance Application Battery protection Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.fuxinsemi.com Page 1 Ver2.1 FS8205A N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature VDS 20 V VGS ±12 V ID 6 A IDM 25 A PD 1.
FS8205A Datasheet
