IS3405 - P-Channel Enhancement Mode MOSFET

Datasheet Details

Part number	IS3405
Manufacturer	FORESEE
File Size	817.08 KB
Description	P-Channel Enhancement Mode MOSFET
Datasheet	IS3405 Datasheet
Additional preview pages of the IS3405 datasheet.

📁 Similar Datasheet

IS341W - Photocoupler (ISOCOM)
IS34C02 - 2K-bit 2-WIRE SERIAL CMOS EEPROM (ISSI)
IS34C02 - 2K-bit 2-WIRE SERIAL CMOS EEPROM (ISSI)
IS34C02B - 2K-bit 2-WIRE SERIAL CMOS EEPROM (ISSI)
IS34C02B - 2K-bit 2-WIRE SERIAL CMOS EEPROM (ISSI)
IS34MC01GA08 - 3.3V 1Gb SLC NAND Flash Memory (ISSI)
IS34MC01GA16 - 3.3V 1Gb SLC NAND Flash Memory (ISSI)
IS34ML01G081 - 1Gb (x8) 3.3V NAND FLASH MEMORY (ISSI)
IS34ML01G084 - 1Gb(x8) 3.3V NAND FLASH MEMORY (ISSI)
IS34ML02G084 - 2Gb(x8) 3.3V NAND FLASH MEMORY (ISSI)

Other Datasheets by FORESEE

IS3403 - P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text

ST I S 3405 S ep.15 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID -3A F E AT UR E S ( m W ) Max R DS (ON) S uper high dense cell design for low R DS (ON ). -30V 100 @ V G S = -10V 130 @ V G S = -4.5V R ugged and reliable. S OT-23 P ackage. D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit - 30 20 -3 - 12 -1.25 1.

Published: Sep 14, 2014 |