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A1309. For precise diagrams, tables, and layout, please refer to the original PDF.
■■APPLICATION：GENERAL PURPOSE APPLICATION. ■■MAXIMUM RATINGS（Ta＝25℃） PARAMETER SYMBOL RATING UNIT Collector-base voltage Collector-emitter voltage Emitter-base voltage Co...
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llector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC PC TJ Tstg -30 V -25 V -5 V -100 mA 300 mW 150 ℃ ﹣55~150 ℃ A1309 —PNP silicon — ■■ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION Common Emitter DC Current Gain hFE 400 VCE= -10V，Ic= -2mA Collector Cut-off Current ICBO -0.1 µA VCB= -30V，IE=0 Emitter Cut-off Current IEBO -0.1 µA VEB= -5V，Ic=0 Collector-Base Breakdown Voltage BVCBO -30 V Ic= -0.
A1309 Datasheet
