Datasheet Details
| Part number | FKP18N20 |
|---|---|
| Manufacturer | FETek |
| File Size | 655.73 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FKP18N20 Datasheet
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| Part number | FKP18N20 |
|---|---|
| Manufacturer | FETek |
| File Size | 655.73 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FKP18N20 Datasheet
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TO220 Pin Configuration The FKP18N20 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FKP18N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 200 ±20 18 11.7 40 15 10 83 -55 to 150 -55 to 150 Typ.
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench technology FKP18N20 N-Ch 200V Fast Switching MOSFETs Product Summary BVDSS.
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