Datasheet Details
| Part number | FKN0008 |
|---|---|
| Manufacturer | FETek |
| File Size | 498.58 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 FKN0008 Datasheet
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| Part number | FKN0008 |
|---|---|
| Manufacturer | FETek |
| File Size | 498.58 KB |
| Description | N-Channel MOSFET |
| Datasheet |
FKN0008 Datasheet
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The FKN0008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The FKN0008 meet the RoHS and Green Product requirement with full function reliability approved.
SOT23 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal Resistance Junction-ambient 1 Thermal Resistance Junction-Case1 Rating 100 ±20 1.2 1 5 1 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Typ.
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology FKN0008 N-Ch 100V Fast Switching MOSFETs Product Summary BVDSS 100V RDSON 310mΩ ID 1.
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