Datasheet Details
| Part number | EMZB08P03H |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 364.15 KB |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
 EMZB08P03H Datasheet
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| Part number | EMZB08P03H |
|---|---|
| Manufacturer | Excelliance MOS |
| File Size | 364.15 KB |
| Description | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Datasheet |
EMZB08P03H Datasheet
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: P-CH BVDSS RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ -30 V 8.5 mΩ 12.4 mΩ -93 A ID @TA=25℃ -13 A Single P Channel MOSFET UIS, Rg 100% Tested RoHS & Halogen Free & TSCA Compliant ESD Protection ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±25 Continuous Drain Current TC = 25 °C TC = 100 °C ID -93 -59 Continuous Drain Current TA = 25 °C TA = 70 °C ID -13 -11 Pulsed Drain Current1 IDM -174 Avalanche Current IAS -50 Avalanche Energy L = 0.1mH EAS 125 Repetitive Avalanche Energy2 L = 0.05mH EAR 62.5 Power Dissipation TC = 25 °C TC = 100 °C PD 104 42 Power Dissipation TA = 25 °C TA = 70 °C PD 2.3 1.5 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 ▪100% UIS testing in condition of VD=25V, L=0.1mH, VG=10V, IL=30A, RG=25Ω,Rated VDS=-30V P-CH ▪THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RθJC 1.2 Junction-to-Ambient3 t≦10s Steady-State RθJA RθJA 20 55 1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％ 3The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
EMZB08P03H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪.
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