EMP85N10H
Description
:
N-CH
BVDSS
100V
RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V ID @TC=25℃
7.5mΩ 10.0mΩ 107.0A
ID @TA=25℃
14.0A
Single N Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant
- ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current
TC = 25 °C TC = 100 °C
Continuous Drain Current
TA = 25 °C TA = 70 °C
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
L = 0.1m H
Repetitive Avalanche Energy2
L = 0.05m H
Power Dissipation
TC = 25 °C TC = 100 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
Tj, Tstg
- 100% UIS testing in condition of VD=50V, L=0.1m H, VG=10V, IL=18A, Rated VDS=100V...
