• Part: EMP31N03HQ
  • Description: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 337.62 KB
Download EMP31N03HQ Datasheet PDF
Excelliance MOS
EMP31N03HQ
Description : N-CH BVDSS 30 V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.1 mΩ 4.2 mΩ ID @TC=25℃ 97 A ID @TA=25℃ 21 A Single N Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage ±20 Continuous Drain Current TC = 25 °C TC = 100 °C 97 61 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C 21 17 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1m H L = 0.05m H Power Dissipation TC = 25 °C TC = 100 °C 50 20 Power Dissipation TA = 25 °C TA = 70 °C 2.5...