EMB45A06G
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
60V
RDSON (MAX.)
45mΩ
6A
UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate‐Source Voltage
±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1m H, ID=12A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05m H
Power Dissipation
TA = 25 °C TA = 100 °C
Operating Junction & Storage Temperature Range
PD Tj, Tstg
2 0.8 ‐55 to 150
100% UIS testing in condition of VD=30V, L=0.1m H, VG=10V, IL=10A, Rated VDS=60V N‐CH THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
Junction‐to‐Case
RJC...
