EMB02Q03HP
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V
30V
RDSON (MAX.) 5.0mΩ 2.0mΩ
53A
95A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
Continuous Drain Current3 Avalanche Current
TA = 25 °C TA = 70 °C
Avalanche Energy Repetitive Avalanche Energy2
L = 0.1m H, RG=25Ω L = 0.05m H
Power Dissipation
TC = 25 °C TC = 100 °C
Power Dissipation
TA = 25 °C TA = 70 °C
Operating Junction & Storage Temperature Range
VGS ID IDM ID IAS EAS EAR PD
PD Tj, Tstg
LIMITS
Q1
Q2
±20
±20...
