EMB02K03HP Datasheet | Excelliance MOS

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: S2 S2 S2 G2 N‐CH‐Q1 N‐CH‐Q2 BVDSS 30V RDSON (MAX.) 5.5mΩ 30V 2.6mΩ D2 / S1 50A 83A D1 UIS, Rg 100% Tested Pb‐Free Lead Plating & Halogen Free D1 D1 D1 PIN 1 (G1) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1m H, RG=25Ω L = 0.05m H Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction‐to‐Case RJC Steady State Junction‐to‐Ambient RJA Steady State RJA t ≦ 10 s 1Pulse width limited by maximum junction temperature. 2Duty cycle  1％ 3Package limitation current, Q1=25A, Q2=36A RJA when mounted on a 1 in2 pad of 2 oz copper. VGS ID IDM IAS EAS EAR PD Tj,...