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PGEW1S03H - Low-Cost High-Power Laser-Diode

Download the PGEW1S03H datasheet PDF. This datasheet also covers the PGEW1S09H variant, as both devices belong to the same low-cost high-power laser-diode family and are provided as variant models within a single manufacturer datasheet.

Description

PGEW1SXXH Single chip laser Single epi-cavity DPGEW1SXXH Single chip laser Double epi-cavity TPGEW1SXXH Single chip laser Triple epi-cavity QPGEW1SXXH Single chip laser Quad epi-cavity Total # of emitting stripes 1 Typical peak power at iFM, 100 ns, 10A

Features

  • Doubling, tripling or quadrupling of the output power from a single epi-cavity chip with a small active area.
  • Peak power over 100 W at 20 ns pulse width.
  • High reliability.
  • Small emitting areas increase fiber coupled output.
  • Lower cost plastic packaging for high volume.
  • RoHS compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PGEW1S09H-Excelitas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PGEW1S03H
Manufacturer Excelitas
File Size 673.60 KB
Description Low-Cost High-Power Laser-Diode
Datasheet download datasheet PGEW1S03H Datasheet

Full PDF Text Transcription

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DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Series is ideal for commercial range finding applications. Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad laser at 225 µm active layer width, which has four epitaxially grown lasing layers, delivers an output peak power close to 100 W.
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