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LL60 - Schottky Barrier Diode

Key Features

  • 1. High reliability 2. Low reverse current and low forward voltage.

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Datasheet Details

Part number LL60
Manufacturer Excel Semiconductor
File Size 227.05 KB
Description Schottky Barrier Diode
Datasheet download datasheet LL60 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LL60/LL60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage LL60 VRRM 40 V LL60P VRRM 45 V Peak forward surge current tp≦1 s LL60 IFSM 150 mA LL60P IFSM 500 mA Forward continuous current Ta=25℃ LL60 IF 30 mA LL60P IF 50 mA Storage temperature range Tstg -65~+125 ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied.