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LL60/LL60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter
Test Conditions
Type
Symbol
Value
Unit
Repetitive peak reverse voltage
LL60
VRRM
40
V
LL60P
VRRM
45
V
Peak forward surge current
tp≦1 s
LL60
IFSM
150
mA
LL60P
IFSM
500
mA
Forward continuous current
Ta=25℃
LL60
IF
30
mA
LL60P
IF
50
mA
Storage temperature range
Tstg
-65~+125
℃
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied.