LL5711
Features
1. For general purpose applications. 2. Metal-on-silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
Absolute Maximum Ratings (Tj=25℃)
Parameter Peak inverse voltage
Maximum single cycle surge 10us square wave Power dissipation Maximum junction temperature Storage temperature range
Part
Symbol
Value
Unit
VRRM
LL6263
VRRM
IFSM
Ptot
400 m W
Tj
℃
-55~+150
℃
Electrical Characteristics(Tj=25 ℃)
Parameter
Symbol
Test Conditions
Part Min Typ Max Unit
Reverse breakdown voltage
V(BR)R IR=10μA (pulsed)
LL5711 70
- -
LL6263 60
- -
Leakage current Forward voltage drop Junction capacitance
VR=50V...
