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XR-2012 - High-Current Darlington Transistor Arrays

Download the XR-2012 datasheet PDF. This datasheet also covers the XR-2011 variant, as both devices belong to the same high-current darlington transistor arrays family and are provided as variant models within a single manufacturer datasheet.

Description

The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic substrate.

All units feature open collector outputs and integral protection diodes for driving inductive loads.

Features

  • Peak Inrush Current Capability of 750 mA Internal Protection Diodes for Driving Inductive Loads Excellent Noise Immunity Direct Compatibility with Most Logic Families Opposing Pin Configuration Eases Circuit Soard Layout.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (XR-2011-Exar.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Exar (now MaxLinear)

Part Number Description
XR-2011 High-Current Darlington Transistor Arrays
XR-2013 High-Current Darlington Transistor Arrays
XR-2014 High-Current Darlington Transistor Arrays
XR-2001 High Voltage / High Current Darlington Transistor Arrays
XR-2002 High Voltage / High Current Darlington Transistor Arrays

Full PDF Text Transcription

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XR-2011/12/13/14 High·Voltage, High·Current Darlington Transistor Arrays GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic substrate. All units feature open collector outputs and integral protection diodes for driving inductive loads. Peak inrush currents of up to 750 mA are allowed, which makes the arrays ideal for driving tungsten filament lamps. The outputs may be paralleled to achieve higher load current capability although each driver has a maximum continuous collector current rating of 600 mAo The arrays are directly price competitive with discrete transistor alternatives.
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