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Technische Information / Technical Information
IGBT-Module IGBT-Modules
BSM 200 GB 60 DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage
Kollektor-Dauergleichstrom DC-collector current
Tc= 50°C Tc= 25°C
Periodischer Kollektor Spitzenstrom repetitive peak collector current
tP= 1ms, Tc= 50°C
Gesamt-Verlustleistung total power dissipation
Tc= 25°C, Transistor
Gate-Emitter-Spitzenspannung gate-emitter peak voltage
Dauergleichstrom DC forward current
Periodischer Spitzenstrom repetitive peak forw. current
tP= 1ms
Grenzlastintegral der Diode I2t - value, Diode
VR= 0V, tp= 10ms, Tvj= 125°C
Isolations-Prüfspannung insulation test voltage
RMS, f= 50Hz, t= 1min.
VCES IC,nom.
200GB60DLC Datasheet
