ELM1314-9F
FEATURES
- High Output Power: P1d B=39.5d Bm(Typ.)
- High Gain: G1d B=6.0d B(Typ.)
- High PAE: ηadd=30%(Typ.)
- Broad Band: 13.75 to 14.5GHz
- Impedance Matched Zin/Zout = 50ohm
- Hermetically Sealed Package DESCRIPTION
The ELM1314-9F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS
Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C) Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Tstg Tch Rating 15 -5 35.7 -55 to +125 +175 Unit V V W deg.C deg.C
REMENDED OPERATING CONDITION
Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Storage Tem perature Channel Tem perature Sym bol V DS IGF IGR Tstg Tch Condition RG=100 ohm RG=100 ohm -55 to +125 ≤+155 Re m end ≤10 ≤+19.5 ≥-4.3 Unit V m A m A deg.C deg.C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item Drain Current Trans conductance Pinch-off Voltage Gate-Source...
