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TUMNF16H - 55V N-Channel MOSFET

Key Features

  • ‧55V, 0.36A, RDS(ON)=1.6Ω@VGS=10V ‧ESD Protected ‧Fast switching ‧Green Device Available 55V N-Channel MOSFETs BVDSS 55 V RDS(ON) 1.6 Ω ID 360 mA.

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Datasheet Details

Part number TUMNF16H
Manufacturer Eris
File Size 271.21 KB
Description 55V N-Channel MOSFET
Datasheet download datasheet TUMNF16H Datasheet

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TUMNF16H D1 D2 G1 G2 S1 S2 SOT-363 Features ‧55V, 0.36A, RDS(ON)=1.6Ω@VGS=10V ‧ESD Protected ‧Fast switching ‧Green Device Available 55V N-Channel MOSFETs BVDSS 55 V RDS(ON) 1.6 Ω ID 360 mA Applications ‧Case:SOT-363 ‧Load Switch ‧Hand-Held Instruments Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter VDS VGS ID IDM PD TJ TSTG Marking Code Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous Drain Current - Pulsed Total Power Dissipation (TA=25oC) (NOTE 1) Operating Junction Temperature Range Storage Temperature Range NOTES: 1.1*MRP FR-4 PC board,2oz. Rating 55 ±20 360 1200 275 -50 to 150 -50 to 150 E38 , D8 Units V V mA mA mW oC oC Thermal Characteristics Symbol Parameter RθJA Thermal Resistance Junction to Ambient Typ.