TPMNG30H
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
60V N-Channel MOSFETs
BVDSS 60 V
RDS(ON) 3Ω
ID 300 m A
Features
‧RDS(ON)≦3Ω@VGS=10V ‧Improved dv/dt capability ‧Fast switching ‧Green Device Available
SOT-323 Pin Configuration
Applications ‧Notebook ‧Load Switch ‧Battery Protection ‧Hand-Held Instruments
Absolute Maximum Ratings TC=25o C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TA=25o C) Drain Current
- Continuous (TA=70o C)
Drain Current
- Pulsed (NOTE 1)
Power Dissipation (TC=25o C) Power Dissipation
- Derate above 25o C
TJ TSTG
Operating...
