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S8MND013 - 40V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • ‧RDS(ON)≦13mΩ@VGS=10V ‧Improved dv/dt capability ‧Fast switching ‧Green Device Available SOP-8 Pin Configuration D2D2 D1 D1 D1 D2 G1 G2 G2 S1G1S2 S1 S2.

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Datasheet Details

Part number S8MND013
Manufacturer Eris
File Size 875.14 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet S8MND013 Datasheet

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Full PDF Text Transcription

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S8MND013 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
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