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S8MNC4P2 - 30V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • ‧RDS(ON)≦4.2mΩ@VGS=10V ‧Improved dv/dt capability ‧Fast switching ‧Green Device Available SOP-8 Pin Configuration D D DD D SS SG G S.

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Datasheet Details

Part number S8MNC4P2
Manufacturer Eris
File Size 960.10 KB
Description 30V N-Channel MOSFET
Datasheet download datasheet S8MNC4P2 Datasheet

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Full PDF Text Transcription

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S8MNC4P2 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. 30V N-Channel MOSFETs BVDSS 30 V RDS(ON) 4.2 mΩ ID 30 A Features ‧RDS(ON)≦4.
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