S8MBG036
Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
BVDSS 60 V -60 V
RDS(ON) 36 mΩ 70 mΩ
ID 12.5 A -9.7 A
Features
‧Fast Switching ‧Green Device Available
SOP-8 Pin Configuration
D2D2 D1 D1
G1 S1G1S2G2
D1
D2
G2
S1
S2
Absolute Maximum Ratings TC=25o C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TA=25o C)
Drain Current
- Pulsed (NOTE 1)
Power Dissipation (TA=25o C)
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Marking Code
Applications ‧Boost Driver ‧Brushless Motor
Rating
-60
±20...
