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LFMND0P7 - 40V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • ‧RDS(ON)≦0.7mΩ@VGS=10V ‧Improved dv/dt Capability ‧Fast Switching ‧Green Device Available.

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Datasheet Details

Part number LFMND0P7
Manufacturer Eris
File Size 315.29 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet LFMND0P7 Datasheet

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LFMND0P7 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. LFPAK8080 Pin Configuration D G S 40V N-Channel MOSFETs BVDSS 40 V RDS(ON) 0.7 mΩ ID 455 A Features ‧RDS(ON)≦0.7mΩ@VGS=10V ‧Improved dv/dt Capability ‧Fast Switching ‧Green Device Available Applications ‧DC-DC Converters ‧Body Control Electronics ‧LED Lighting Ordering Information Part No.
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