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PTF10160 - 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor

Description

The PTF 10160 is an internally matched 85

watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications.

It operates with 53% efficiency and 16 dB typical gain.

Full gold metallization ensures excellent device lifetime and reliability.

INTERNALLY MATCHED Perfo

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Datasheet Details

Part number PTF10160
Manufacturer Ericsson
File Size 253.12 KB
Description 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10160 Datasheet

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Full PDF Text Transcription

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PTF 10160 85 Watts, 860–960 MHz GOLDMOS ® Field Effect Transistor Description The PTF 10160 is an internally matched 85–watt GOLDMOS FET intended for cellular, GSM, D-AMPS and EDGE applications. It operates with 53% efficiency and 16 dB typical gain. Full gold metallization ensures excellent device lifetime and reliability. • • INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 85 Watts - Power Gain = 16 dB Typ - Efficiency = 53% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability • • • • Typical Output Power& Efficiency vs.
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