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PTF10135 - 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor

Description

The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz.

It is rated at 5 watts minimum output power.

Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.

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Datasheet Details

Part number PTF10135
Manufacturer Ericsson
File Size 245.76 KB
Description 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10135 Datasheet

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Full PDF Text Transcription

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PTF 10135 5 Watts, 2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10135 is a common source N-channel enhancement-mode lateral MOSFET intended for large signal applications from 1.0 to 2.0 GHz. It is rated at 5 watts minimum output power. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. 100% lot traceability is standard. • • • • • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability Typical Output Power vs. Input Power 8 7 Output Power (Watts) 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.
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