Datasheet4U Logo Datasheet4U.com

PTF10048 - 30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor

Description

The PTF 10048 is an internally matched 30

watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz.

It operates at 40% efficiency with 10.5 dB typical gain.

Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

📥 Download Datasheet

Datasheet Details

Part number PTF10048
Manufacturer Ericsson
File Size 233.66 KB
Description 30 Watts/ 2.1-2.2 GHz/ W-CDMA GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10048 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PTF102003 PUSH/PULL LATERAL MOSFET PEAK
PTF11A Relay Omron
PTF13005 NPN Silicon Power Transistor Wing On
PTF14A-E Relay Omron
PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz Infineon Technologies AG

Other Datasheets by Ericsson

Part Number Description
PTF10043 12 Watts/ 1.9-2.0 GHz GOLDMOS Field Effect Transistor
PTF10045 30 Watts/ 1.60-1.65 GHz GOLDMOS Field Effect Transistor
PTF10007 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
PTF10009 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
PTF10015 50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor

Full PDF Text Transcription

Click to expand full text
PTF 10048 30 Watts, 2.1–2.2 GHz, W-CDMA GOLDMOS ® Field Effect Transistor Description The PTF 10048 is an internally matched 30–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 30 Watts Min - Gain = 10.5 dB Typ at 30 Watts Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power & Efficiency vs.
Published: |