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PTB 20216 6 Watts, 1.8–2.0 GHz RF Power Transistor
Description
The 20216 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency band. Rated at 6 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
6 Watts, 1.80–2.00 GHz Class AB Characteristics 30% Collector Efficiency at 4 Watts Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel
Typical Output Power vs. Input Power
7
Output Power (Watts)
VCC = 26 V
6 5 4 3 2 0.0 0.2 0.4 0.6 0.8
ICQ = 50 mA f = 1.8 - 2.
PTB20216 Datasheet
