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PTB 20193 60 Watts, 1.8–1.9 GHz Cellular Radio RF Power Transistor
Description
The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard.
60 Watts, 1.8–1.9 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
Output Power (Watts)
60 50 40 30 20 10 1 3 5 7 9 11 13
201 93
LOT COD E
VCC = 26 V ICQ = 150 mA f = 1.
PTB20193 Datasheet
