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PTB 20079 10 Watts, 1.6–1.7 GHz INMARSAT RF Power Transistor
Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internallymatched, common emitter RF Power transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.
10 Watts, 1.6–1.7 GHz Class A/AB Characteristics 38% Collector Efficiency at 10 Watts Gold Metallization Silicon Nitride Passivated
Typical Output Power vs. Input Power
16 +24V 14 +26V +22V
Output Power (Watts)
12 10 8 6 4 2 0 0.00
2007 9
LOT COD E
f = 1.65 GHz ICQ = 100 mA
0.50 1.00 1.50 2.
PTB20079 Datasheet
