EM42CM1684RTA
Features
Description
- Internal Double-Date-Rate architecture with twice accesses per clock cycle.
- Single 2.5V ±0.2V Power Supply
- 2.5V SSTL-2 patible I/O
- Burst Length (B/L) of 2, 4, 8
- CAS Latency: 3
- Bi-directional data strobe (DQS) for input and output data, active by both edges
- Data Mask (DM) for write data
- Sequential & Interleaved Burst type available
- Auto precharge option for each burst accesses
- DQS edge-aligned with data for Read cycles
- DQS center-aligned with data for Write cycles
- DLL aligns DQ & DQS transitions with CLK transition
- Auto Refresh and Self Refresh
- 8,192 Refresh Cycles / 64ms
The EM42CM1684RTA is high speed Synchronous graphic RAM fabricated with ultra high performance CMOS process containing 1,073,741,824 bits which organized as 16Meg words x 4 banks by 16 bits. The 1Gb DDR SDRAM uses double data rate architecture to acplish high-speed operation. The data path internally prefetches multiple bits and transfers the data for both rising and...
