EN25B10
FEATURES
- Single power supply operation
- Full voltage range: 2.7-3.6 volt
- 1 M-bit Serial Flash
- 1 M-bit/128 K-byte/512 pages
- 256 bytes per programmable page
- High performance
- 75MHz clock rate
- Low power consumption
- 5 m A typical active current
- 1 μA typical power down current
- Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16Kbyte,three 32-Kbyte sectors
- Software and Hardware Write Protection:
- Write Protect all or portion of memory via software
- Enable/Disable protection with WP# pin
- High performance program/erase speed Byte program time: 7µs typical Page program time: 1.5ms typical Sector erase time: 300 to 500ms typical Chip erase time: 2 Seconds typical
- Minimum 100K endurance cycle
- Package Options
- 8 pins SOP 150mil body width
- 8 contact VDFN
- mercial and industrial temperature Range
GENERAL DESCRIPTION
The EN25B10 is a 1M-bit (128K-byte) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-patible...
