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29F512 - EN29F512

Description

The EN29F512 is a 512-Kbit, electrically erasable, read/write non-volatile flash memory.

Organized into 64K bytes with 8 bits per byte, the 512K of memory is arranged in four uniform sectors of 16Kbytes each.

Any byte can be programmed typically in 7µs.

Features

  • 5.0V operation for read/write/erase operations.
  • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns.
  • Sector Architecture: 4 uniform sectors of 16Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 7µs typical Sector erase time: 300ms typical Chip erase time: 1.5s typical.
  • JEDE.

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Datasheet Details

Part number 29F512
Manufacturer Eon Silicon Solution
File Size 466.17 KB
Description EN29F512
Datasheet download datasheet 29F512 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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EN29F512 EN29F512 512 Kbit (64K x 8-bit) 5V Flash Memory FEATURES • 5.0V operation for read/write/erase operations • Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns • Sector Architecture: 4 uniform sectors of 16Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program/erase speed Byte program time: 7µs typical Sector erase time: 300ms typical Chip erase time: 1.
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