EM610FV8S
FEATURES
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- - Process Technology : 0.18µ m Full CMOS Organization : 128K x 8 bit Power Supply Voltage : 2.7V ~ 3.6V Low Data Retention Voltage : 1.5V(Min) Three state output and TTL patible Package Type : 32-s TSOP1
EM610FV8S Series
Low Power, 128Kx8 SRAM
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GENERAL DESCRIPTION
The EM610FV8S families are fabricated by EMLSI’s advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation Product Family Operating Temperature Industrial (-40 ~ 85o C) Vcc Range Speed Standby (ISB1 , Typ) 0.5µA2) Operating (I CC1.Max) 3 m A PKG Type
2.7V~3.6V
551) / 70ns
- s TSOP1
1. The parameter is measured with 30p F test load. 2. Typical values are measured at Vcc=3.3V, T A =25 o C and not 100% tested.
PIN DESCRIPTION
A11 A9 A8 A13 WE CS2 A15...
